Evgeni Gusev

Athanasios Dimoulas

Paul C. McIntyre

Marc Heyns

This book provides a comprehensive monograph on gate stacks in semiconductor technology. It covers the major latest developments and basics and will be useful as a reference work for researchers, engineers and graduate students alike. The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any closer to a viable Ge and III-V MOS technology.

Advanced Gate Stacks for High-Mobility Semiconductors

The goal of this NATO Advanced Research Workshop (ARW) entitled “Defects in Advanced High-k Dielectric Nano-electronic Semiconductor Devices”, which was held in St. Petersburg, Russia, from July 11 to 14, 2005, was to examine the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. The special feature of this workshop was focus on an important issue of defects in this novel class of materials. One of the key obstacles to high-k integration into Si nano-technology are the electronic defects in high-k materials. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. However, very little is known about the nature of the defects or about possible techniques to eliminate, or at least minimize them. Given the absence of a feasible alternative in the near future, well-focused scientific research and aggressive development programs on high-k gate dielectrics and related devices must continue for semiconductor electronics to remain a competitive income producing force in the global market.

Nano-Electronic Semiconductor Devices

Defects in HIgh-k Gate Dielectric Stacks

Eric Garfunkel

Alexander Vul'

An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.

Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices

Arthur Dideikin

A NATO Advanced Research Workshop (ARW) entitled “Advanced Materials and Technologies for Micro/Nano Devices, Sensors and Actuators” was held in St. Petersburg, Russia, from June 29 to July 2, 2009. The main goal of the Workshop was to examine (at a fundamental level) the very complex scientific issues that pertain to the use of micro- and nano-electromechanical systems (MEMS and NEMS), devices and technologies in next generation commercial and defen- related applications. Micro- and nano-electromechanical systems represent rather broad and diverse technological areas, such as optical systems (micromirrors, waveguides, optical sensors, integrated subsystems), life sciences and lab equipment (micropumps, membranes, lab-on-chip, membranes, microfluidics), sensors (bio-sensors, chemical sensors, gas-phase sensors, sensors integrated with electronics) and RF applications for signal transmission (variable capacitors, tunable filters and antennas, switches, resonators). From a scientific viewpoint, this is a very multi-disciplinary field, including micro- and nano-mechanics (such as stresses in structural materials), electronic effects (e. g. charge transfer), general electrostatics, materials science, surface chemistry, interface science, (nano)tribology, and optics. It is obvious that in order to overcome the problems surrounding next-generation MEMS/NEMS devices and applications it is necessary to tackle them from different angles: theoreticians need to speak with mechanical engineers, and device engineers and modelers to listen to surface physicists. It was therefore one of the main objectives of the workshop to bring together a multidisciplinary team of distinguished researchers.

Advanced Materials and Technologies for Micro/Nano-Devices, Sensors and Actuators

Fred Roozeboom

Paul Timans

Vijay Narayanan

Kuniyuki Kakushima

Zia Karim

Stefan De Gendt

Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6

Serge Luryi

Anatoli Korkin

Jan K. Labanowski

Quickly becoming the hottest topic of the new millennium (2.4 billion dollars funding in US alone) Current status and future trends of micro and nanoelectronics research Written by leading experts in the corresponding research areas Excellent tutorial for graduate students and reference for "gurus" Provides a broad overlook and fundamentals of nanoscience and nanotechnology from chemistry to electronic devices

Nanotechnology for Electronic Materials and Devices

Evgeni Gusev

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