Michael Shur

In many respects, compound semiconductor technology has reached the age of maturity when applications will have been defined, yields are high enough and well established, and gallium arsenide and related compounds have carved many important niches in electronics. This book reviews the state-of-the-art of compound semiconductor electronics. It covers the microwave, millimeter wave, and submillimeter wave devices, monolithic microwave and digital integrated circuits made from compound semiconductors and emerging wide band semiconductor materials. The book is written by leading experts in compound semiconductor electronics from industry and academia and strikes the balance between practical applications, record-breaking results, and design and modeling tools specific for compound semiconductor technology. Engineers, scientists, and graduate students working in solid state electronics and especially in the area of compound semiconductor electronics will find this book very useful. It could also be used as a text or a supplementary text for graduate courses in this field.

The Age of Maturity

Compound Semiconductor Electronics

GaAs devices and integrated circuits have emerged as leading contenders for ultra-high-speed applications. This book is intended to be a reference for a rapidly growing GaAs community of researchers and graduate students. It was written over several years and parts of it were used for courses on GaAs devices and integrated circuits and on heterojunction GaAs devices developed and taught at the University of Minnesota. Many people helped me in writing this book. I would like to express my deep gratitude to Professor Lester Eastman of Cornell University, whose ideas and thoughts inspired me and helped to determine the direction of my research work for many years. I also benefited from numerous discussions with his students and associates and from the very atmosphere of the pursuit of excellence which exists in his group. I would like to thank my former and present co-workers and colleagues-Drs. Levinstein and Gelmont of the A. F. Ioffe Institute of Physics and Technology, Professor Melvin Shaw of Wayne State University, Dr. Kastalsky of Bell Communi cations, Professor Gary Robinson of Colorado State University, Professor Tony Valois, and Dr. Tim Drummond of Sandia Labs-for their contributions to our joint research and for valuable discussions. My special thanks to Professor Morko.;, for his help, his ideas, and the example set by his pioneering work. Since 1978 I have been working with engineers from Honeywell, Inc.-Drs.

GaAs Devices and Circuits

Tor A. Fjeldly

The steady downscaling of device-feature size combined with a rapid increase in circuit complexity as well as the introduction of new device concepts based on non-silicon-material systems poses great challenges for device and circuit designers. One of the major tasks is the development of new and improved device models needed for accurate device and circuit design. Another task is the development of new circuit-simulation tools to handle very large and complex circuits. This book addresses both these issues with up-to-date reviews written by leading experts in the field. The first three chapters of the book discuss advanced device models both for existing technologies and for new, emerging technologies. Among the topics covered are models for MOSFETs, thin-film transitors (TFTs), and compound semiconductor devices, including GaAs HEMTs and HFETs, heterodimensional devices, quantum-tunneling devices, as well as wide-bandgap devices. Chapters 4 and 5 discuss advanced circuit simulators that hold promise for,handling circuits of much higher complexity than what is possible for typical state-of-the-art circuit simulators today.

Advanced Device Models and Circuit Simulators

Silicon and Beyond

Sergey L. Rumyantsev

Mikhail Efimovich Levinshte?n

After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices ? power switching Schottky diodes and high temperature MESFETs ? are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.

SiC Materials and Devices

M. Levinshtein

The Handbook Series on Semiconductor Parameters will consist of 5 volumes and will include data on the most popular semiconductor materials. These volumes aim to be a basic reference for scientists, engineers, students and technicians working in semiconductor materials and devices. The books have been kept compact but comprehensive and contain the values of frequently needed parameters selected and commented by leading experts on these materials. The first volume will include data on Si, Ge, diamond, GaAs, GaP, GaSb, InAs, InP, and InSb.

Ternary and quaternary III-V compounds

Handbook Series on Semiconductor Parameters

This book brings together seven selected best papers presented at the 2014 Russia–Japan–USA Symposium on Fundamental and Applied Problems of Terahertz Devices and Technologies (RJUS TeraTech-2014), which was held at the University of Buffalo, New York, USA on 17–21 June 2014. As the third in the series of annual meetings, RJUS TeraTech-2014 continues to be an excellent platform for researchers to exchange their recent original results, and to deal with the technical challenges and barriers of transitioning the research results into the THz system-level applications. The symposium focuses on 2 main areas, namely, interaction of THz radiation with micro- and nano-structures, and advanced solid-state THz emitters and sensors. Leading experts from academia, industry, and government agencies from three countries, including USA, Japan, and Russia, contributed to the collection of research results and developments. This book, covering issues ranging from basic Thz-related phenomena to applications in sensing, imaging, and communications, contains some ground-breaking works in the industry, and will be a useful reference for device and electronics engineers and scientists. Contents:Terahertz Sensing Technology (M Shur)Detection of Terahertz Radiation by Dense Arrays of InGaAs Transistors (D M Yermolayev, E A Polushkin, S Yu Shapoval, V V Popov, K V Marem′yanin, V I Gavrilenko, N A Maleev, V M Ustinov, V E Zemlyakov, V I Yegorkin, V A Bespalov, A V Muravjov, S L Rumyantsev and M S Shur)Investigation and Fabrication of the Semiconductor Devices Based on Metamorphic InAlAs/InGaAs/InAlAs Nanoheterostructures for THz Applications (D V Lavrukhin, A E Yachmenev, R R Galiev, A S Bugaev, Y V Fedorov, R A Khabibullin, D S Ponomarev and P P Maltsev)Peculiarity of Terahertz Waves Scattering (I N Dolganova, S O Yurchenko, V E Karasik and V P Budak)Rashba Effect and Beating Patterns in the THz Magneto-Photoresponse of a HgTe-Based Two-Dimensional Electron Gas (M Pakmehr, C Brüne, H Buhmann, L W Molenkamp and B D McCombe)Characterization of High Mobility InAlAs/InGaAs/InAlAs Composite Channels by THz Magneto-Photoresponse Spectroscopy (M Pakmehr, B D McCombe, O Chiatti, S F Fischer, Ch Heyn and W Hansen)Quantum Dot Solar Cells with Nanoscale Barriers Around Dots: Experiment and Two-Diode Model Analysis (Y Li, A Sergeev, N Vagidov, V Mitin and K Sablon) Readership: Scientists, engineers and researchers interested in terahertz materials, devices, systems and applications, as well as graduate students working on terahertz science and technology. Keywords:Terahertz Devices and Technologies;Terahertz Radiation;Micro-and Nanostructures;Emitters and Sensors

Selected Papers from the Russia–Japan–USA Symposium (RJUS TeraTech-2014)

Fundamental &amp; Applied Problems of Terahertz Devices and Technologies

Dwight L. Woolard

William R. Loerop

The last research frontier in high frequency electronics lies in the so-called terahertz (or submillimeter wave) regime, between the traditional microwave and the infrared domains. Significant scientific and technical challenges within the terahertz (THz) frequency regime have recently motivated an array of new research activities. During the last few years, major research programs have emerged that are focused on advancing the state of the art in THz frequency electronic technology and on investigating novel applications of THz frequency sensing. This book provides a detailed review of the new THz frequency technological developments that are emerging across a wide spectrum of sensing and technology areas.Volume II presents cutting edge results in two primary areas: (1) research that is attempting to establish THz-frequency sensing as a new characterization tool for chemical, biological and semiconductor materials, and (2) theoretical and experimental efforts to define new device concepts within the ?THz gap?.

Terahertz Sensing Technology: Emerging scientific applications & novel device concepts

William Tang

Yoon-Soo Park

The 2002 Workshop on Frontiers in Electronics was the third in the series of WOFE workshops. Over 70 leading experts from academia, industry, and government agencies reported on the most recent developments in their fields and exchanged views on future trends and directions of the electronics and photonics industry. The issues they addressed ranged from system-on-chip to DNA doping, from ultrathin SOI to electrotextiles, from photonics integration on the ULSI platform to wide band gap semiconductor devices and solid state lighting. The rapid pace of electronic technology evolution compels a merger of different technical areas, and WOFE-02 provided a unique opportunity for cross-fertilization of the emerging fields of microelectronics, photonics, and nanoelectronics. The workshop was informal and stimulated provocative views, visionary outlooks, and discussions on controversial issues. Contents: Optical Wave Propagation in Periodic Structures (A Yariv & S Mookherjea); MEMS Technology for Advanced Telecommunication Applications (H-G Lee et al.); Low Temperature Physics at Room Temperature in Water: Charge Inversion in Chemical and Biological Systems (A Yu Grosberg et al.); Materials for Strained Silicon Devices (P M Mooney); System-on-Chip Integration (R R Doering); Nanoelectronics: Some Current Aspects and Prospects (R Hull et al.); Electrotextiles (E Ethridge & D Urban); System Impact of Silicon Carbide Power Devices (B Ozpineci et al.); Hot-Phonon Limited Electron Energy Relaxation in AIN/GaN (A Matulionis et al.); Polar-Optical Phonon Enhancement of Harmonic Generation in Schottky Diodes (B Gelmont et al.); Environmental Sensing of Chemical and Biological Warfare Agents in the THz Region (A C Samuels et al.); Thermal Management in Optoelectronics (D K Johnstone); Spectral Response Measurements of Short Wave Infrared Detectors (SWIR) (T F Refaat et al.); Full-Chip Power-Supply Noise: The Effect of On-Chip Power-Rail Inductance (C W Fok & D L Pulfrey); Quantum Dot Superlattices in a Constant Electric Field: Localization and Bloch Oscillations (R A Suris & I A Dmitriev); and other papers. Readership: Scientists, engineers and graduate students working in the area of microelectronics, semiconductor materials and devices.

Future Chips : Proceedings of the 2002 Workshop on Frontiers in Electronics (WOFE-02), St Croix, Virgin Islands, USA, 6-11 January 2002

Frontiers in Electronics

Robert Foster Davis

The unique materials properties of GaN-based semiconductors havestimulated a great deal of interest in research and developmentregarding nitride materials growth and optoelectronic andnitride-based electronic devices. High electron mobility andsaturation velocity, high sheet carrier concentration atheterojunction interfaces, high breakdown field, and low thermalimpedance of GaN-based films grown over SiC or bulk AlN substratesmake nitride-based electronic devices very promising.

Growth, Fabrication, Characterization and Performance

GaN-based Materials and Devices

The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AlN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property.This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology.

The 2002 Workshop on Frontiers in Electronics was the third in the series of WOFE workshops. Over 70 leading experts from academia, industry, and government agencies reported on the most recent developments in their fields and exchanged views on future trends and directions of the electronics and photonics industry. The issues they addressed ranged from system-on-chip to DNA doping, from ultrathin SOI to electrotextiles, from photonics integration on the ULSI platform to wide band gap semiconductor devices and solid state lighting. The rapid pace of electronic technology evolution compels a merger of different technical areas, and WOFE-02 provided a unique opportunity for cross-fertilization of the emerging fields of microelectronics, photonics, and nanoelectronics. The workshop was informal and stimulated provocative views, visionary outlooks, and discussions on controversial issues.

Michael Shur

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