Vesselinka Petrova-Koch

Rudolf Hezel

Adolf Goetzberger

This book offers a bird’s-eye view of the recent development trends in photovoltaics – a big business field that is rapidly growing and well on its way to maturity. The book describes current efforts to develop highly efficient, low-cost photovoltaic devices based on crystalline silicon, III–V compounds, copper indium gallium selenide (CIGS) and perovskite photovoltaic cells along with innovative, cost-competitive glass/ flexible tubular glass concentrator modules and systems, highlighting recent attempts to develop highly efficient, low-cost, flexible photovoltaic cells based on CIGS and perovskite thin films. This second edition presents, for the first time, the possible applications of perovskite modules together with Augsburger Tubular photovoltaics.

Recent Developments

High-Efficient Low-Cost Photovoltaics

Eberhard F. Krimmel

This is the first of three Gmelin Handbook volumes in the silicon se ries that will cover silicon nitride, a normaUy solid material with the idealized formula Si N . This volume, 3 4 "Silicon" Supplement Volume B Sc, is devoted to applications of silicon nitride in microelec tronics and solar ceUs. The compendium is the product of a critical selection among more than 17600 publications on silicon nitride issued up to January 1990. Out of a total of 5900 publications dealing with the fabrication and use of microelectronic devices (including 2400 Japanese patent applications), about 4000 papers have been selected for this volume. The current volume is grouped into three parts. Chapters 2 to 8 deal with general, non specific microelectronic applications of silicon nitride, Chapters 9 to 31 cover applications of silicon nitride in specific devices and device components, and Chapter 32 is devoted exclusively to applications in solar ceUs, including information on our general understanding of the role of silicon nitride in photovoltaic devices. Experimental results on the preparation of silicon nitride layers for application in unspeci fied devices are in Chapter 2. Whenever the preparation is in connection with specific devices, the information is presented in the respective chapters. The general preparation of silicon nitride layers is not covered in this volume, but will appear in "Silicon" Supplement Volume B 5a. See also the Introductory Remarks, Chapter 1, p. 1.

Rudolf Hezel

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