Shunpei Yamazaki

Tetsuo Tsutsui

This book highlights the display applications of c-axis aligned crystalline indium–gallium–zinc oxide (CAAC-IGZO), a new class of oxide material that challenges the dominance of silicon in the field of thin film semiconductor devices. It is an enabler for displays with high resolution and low power consumption, as well as high-productivity manufacturing. The applications of CAAC-IGZO focus on liquid crystal displays (LCDs) with extremely low power consumption for mobile applications, and high-resolution and flexible organic light-emitting diode (OLED) displays, and present a large number of prototypes developed at the Semiconductor Energy Laboratory. In particular, the description of LCDs includes how CAAC-IGZO enables LCDs with extremely low refresh rate that provides ultra-low power consumption in a wide range of use cases. Moreover, this book also offers the latest data of IGZO. The IGZO has recently achieved a mobility of 65.5 cm2ƒ}V-s, and it is expected to potentially exceed 100 cm2ƒ}V-s as high as that of LTPS. A further two books in the series will describe the fundamentals of CAAC-IGZO, and the application to LSI devices. Key features: • Introduces different oxide semiconductor field-effect transistor designs and their impact on the reliability and performance of LCDs and OLED displays, both in pixel and panel-integrated driving circuits. • Reviews fundamentals and presents device architectures for high-performance and flexible OLED displays, their circuit designs, and oxide semiconductors as an enabling technology. • Explains how oxide semiconductor thin-film transistors drastically can improve resolution and lower power consumption of LCDs.

Application to Displays

Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO

Noboru Kimizuka

Electronic devices based on oxide semiconductors are the focus of much attention, with crystalline materials generating huge commercial success. Indium–gallium–zinc oxide (IGZO) transistors have a higher mobility than amorphous silicon transistors, and an extremely low off-state current. C-axis aligned crystalline (CAAC) IGZO enables aggressive down-scaling, high reliability, and process simplification of transistors in displays and LSI devices. This original book introduces the CAAC-IGZO structure, and describes the physics and technology of this new class of oxide materials. It explains the crystallographic classification and characteristics of crystalline oxide semiconductors, their crystallographic characteristics and physical properties, and how this unique material has made a major contribution to the field of oxide semiconductor thin films. Two further books in this series describe applications of CAAC-IGZO in flat-panel displays and LSI devices. Key features: Introduces the unique and revolutionary, yet relatively unknown crystalline oxide semiconductor CAAC-IGZO Presents crystallographic overviews of IGZO and related compounds. Offers an in-depth understanding of CAAC-IGZO. Explains the fabrication method of CAAC-IGZO thin films. Presents the physical properties and latest data to support high-reliability crystalline IGZO based on hands-on experience. Describes the manufacturing process the CAAC-IGZO transistors and introduces the device application using CAAC-IGZO.

Fundamentals

Masahiro Fujita

This book describes the application of c-axis aligned crystalline In-Ga-Zn oxide (CAAC-IGZO) technology in large-scale integration (LSI) circuits. The applications include Non-volatile Oxide Semiconductor Random Access Memory (NOSRAM), Dynamic Oxide Semiconductor Random Access Memory (DOSRAM), central processing unit (CPU), field-programmable gate array (FPGA), image sensors, and etc. The book also covers the device physics (e.g., off-state characteristics) of the CAAC-IGZO field effect transistors (FETs) and process technology for a hybrid structure of CAAC-IGZO and Si FETs. It explains an extremely low off-state current technology utilized in the LSI circuits, demonstrating reduced power consumption in LSI prototypes fabricated by the hybrid process. A further two books in the series will describe the fundamentals; and the specific application of CAAC-IGZO to LCD and OLED displays. Key features: • Outlines the physics and characteristics of CAAC-IGZO FETs that contribute to favorable operations of LSI devices. • Explains the application of CAAC-IGZO to LSI devices, highlighting attributes including low off-state current, low power consumption, and excellent charge retention. • Describes the NOSRAM, DOSRAM, CPU, FPGA, image sensors, and etc., referring to prototype chips fabricated by a hybrid process of CAAC-IGZO and Si FETs.

Shunpei Yamazaki

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