Stephen J. Pearton

James W. Corbett

Michael Stavola

Hydrogen in Crystalline Semiconductors

The first GaN and Related Materials covered topics such as a historical survey of past research, optical electrical and microstructural characterization, theory of defects, bulk crystal growth, and performance of electronic and photonic devices. This new volume updates old research where warranted and explores new areas such as UV detectors, microwave electronics, and Er-doping. This unique follow-up features contributions from leading experts that cover the full spectrum of growth.

GaN and Related Materials II

Presents views on current developments in heat and mass transfer research related to the modern development of heat exchangers. Devotes special attention to the different modes of heat and mass transfer mechanisms in relation to the new development of heat exchangers design. Dedicates particular attention to the future needs and demands for further development in heat and mass transfer. GaN and related materials are attracting tremendous interest for their applications to high-density optical data storage, blue/green diode lasers and LEDs, high-temperature electronics for high-power microwave applications, electronics for aerospace and automobiles, and stable passivation films for semiconductors. In addition, there is great scientific interest in the nitrides, because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. This series provides a forum for the latest research in this rapidly-changing field, offering readers a basic understanding of new developments in recent research. Series volumes feature a balance between original theoretical and experimental research in basic physics, device physics, novel materials and quantum structures, processing, and systems.

GaN and Related Materials

Chennupati Jagadish

With an in-depth exploration of the following topics, this book covers the broad uses of zinc oxide within the fields of materials science and engineering: - Recent advances in bulk , thin film and nanowire growth of ZnO (including MBE, MOCVD and PLD), - The characterization of the resulting material (including the related ternary systems ZgMgO and ZnCdO), - Improvements in device processing modules (including ion implantation for doping and isolation ,Ohmic and Schottky contacts , wet and dry etching), - The role of impurities and defects on materials properties - Applications of ZnO in UV light emitters/detectors, gas, biological and chemical-sensing, transparent electronics, spintronics and thin film

Processing, Properties, and Applications

Zinc Oxide Bulk, Thin Films and Nanostructures

Osamu Ueda

Materials and Reliability Handbook for Semiconductor Optical and Electron Devices provides comprehensive coverage of reliability procedures and approaches for electron and photonic devices. These include lasers and high speed electronics used in cell phones, satellites, data transmission systems and displays. Lifetime predictions for compound semiconductor devices are notoriously inaccurate due to the absence of standard protocols. Manufacturers have relied on extrapolation back to room temperature of accelerated testing at elevated temperature. This technique fails for scaled, high current density devices. Device failure is driven by electric field or current mechanisms or low activation energy processes that are masked by other mechanisms at high temperature. The Handbook addresses reliability engineering for III-V devices, including materials and electrical characterization, reliability testing, and electronic characterization. These are used to develop new simulation technologies for device operation and reliability, which allow accurate prediction of reliability as well as the design specifically for improved reliability. The Handbook emphasizes physical mechanisms rather than an electrical definition of reliability. Accelerated aging is useful only if the failure mechanism is known. The Handbook also focuses on voltage and current acceleration stress mechanisms.

Stephen J. Pearton

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