Valeri Mladenov

Nikos Mastorakis

Vassiliki T. Kontargyri

The European Computing Conference offers a unique forum for establishing new collaborations within present or upcoming research projects, exchanging useful ideas, presenting recent research results, participating in discussions and establishing new academic collaborations, linking university with the industry. Engineers and Scientists working on various areas of Systems Theory, Applied Mathematics, Simulation, Numerical and Computational Methods and Parallel Computing present the latest findings, advances, and current trends on a wide range of topics. This proceedings volume will be of interest to students, researchers, and practicing engineers.

Volume 2

Proceedings of the European Computing Conference

Volume 1

Bruno Apolloni

Günther Palm

Nikola K. Kasabov

Alessandro Villa

Petia Koprinkova-Hristova

The book constitutes the proceedings of the 23rd International Conference on Artificial Neural Networks, ICANN 2013, held in Sofia, Bulgaria, in September 2013. The 78 papers included in the proceedings were carefully reviewed and selected from 128 submissions. The focus of the papers is on following topics: neurofinance graphical network models, brain machine interfaces, evolutionary neural networks, neurodynamics, complex systems, neuroinformatics, neuroengineering, hybrid systems, computational biology, neural hardware, bioinspired embedded systems, and collective intelligence.

23rd International Conference on Artificial Neural Networks, Sofia, Bulgaria, September 10-13, 2013, Proceedings

Artificial Neural Networks and Machine Learning -- ICANN 2013

The investigation of new memory schemes, neural networks, computer systems and many other improved electronic devices is very important for future generation's electronic circuits and for their widespread application in all the areas of industry. In this aspect the analysis of new efficient and advanced electronic elements and circuits is an essential field of the highly developed electrical and electronic engineering. The resistance-switching phenomenon, observed in many amorphous oxides has been investigated since 1970 and it is a promising technology for constructing new electronic memories. It has been established that such oxide materials have the ability for changing their conductance in accordance to the applied voltage and memorizing their state for a long-time interval. Similar behaviour has been predicted for the memristor element by Leon Chua in 1971. The memristor is proposed in accordance to symmetry considerations and the relationships between the four basic electric quantities - electric current i, voltage v, charge q and magnetic flux Ψ. The memristor is an essential passive one-port element together with the resistor, inductor, and capacitor. The Williams HP research group has made a link between resistive switching devices, and the memristor proposed by Chua. A number of scientific papers related to memristors and memristor devices have been issued and several memristor models have been proposed. The memristor is a highly nonlinear component. It relates the electric charge q and the flux linkage, expressed as a time integral of the voltage. The memristor element has the important capability for remembering the electric charge passed through its cross-section and its respective resistance, when the electrical signals are switched off. Due to its nano-scale dimensions, non-volatility and memorizing properties, the memristor is a sound potential candidate for application in computer high-density memories, artificial neural networks and in many other electronic devices.

Memristor Circuits and Networks

Advanced Memristor Modeling

Valeri Mladenov

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