Yoshinori Tokura

The features and mechanism of Colossal Magnetoresistance, or CMR, in manganese oxides as well as device physics are highlighted in this book, with a focus on tunneling MR for some artificial structures. Underlying new science, such as tunable electron-lattice interaction in a metal and roles of orbital degrees of freedom in producing an unconventio

Colossal Magnetoresistive Oxides

Jörg Heber

Darrell Schlom

Rainer Waser

Matthias Wuttig

This collection of extended abstracts summarizes the latest research as presented at "Frontiers in Electronic Materials", a Nature conference on correlation effects and memristive phenomena, which took place in 2012. The contributions from leading authors from the US, Japan, Korea, and Europe discuss breakthroughs and challenges in fundamental research as well as the potential for future applications. Hot topics covered include: Electron correlation and unusual quantum effects Oxide heterostructures and interfaces Multiferrroics, spintronics, ferroelectrics and flexoelectrics Processing in nanotechnology Advanced characterization techniques Superionic conductors, thermoelectrics, photovoltaics Chip architectures and computational concepts An essential resource for the researchers of today and tomorrow.

Correlation Effects, Spintronics, and Memristive Phenomena - Fundamentals and Application

Frontiers in Electronic Materials

The features and mechanism of Colossal Magnetoresistance, or CMR, in manganese oxides as well as device physics are highlighted in this book, with a focus on tunneling MR for some artificial structures. Underlying new science, such as tunable electron-lattice interaction in a metal and roles of orbital degrees of freedom in producing an unconventional metallic feature, is also discussed. The book provides a systematic exploration of the CMR materials and an extensive investigation of the electronic phenomena of those compounds by various experimental means.

Yoshinori Tokura

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