Rainer Waser

This outstanding textbook provides an introduction to electronic materials and device concepts for the major areas of current and future information technology. On about 1,000 pages, it collects the fundamental concepts and key technologies related to advanced electronic materials and devices. The obvious strength of the book is its encyclopedic character, providing adequate background material instead of just reviewing current trends. It focuses on the underlying principles which are illustrated by contemporary examples. The third edition now holds 47 chapters grouped into eight sections. The first two sections are devoted to principles, materials processing and characterization methods. Following sections hold contributions to relevant materials and various devices, computational concepts, storage systems, data transmission, imaging systems and displays. Each subject area is opened by a tutorial introduction, written by the editor and giving a rich list of references. The following chapters provide a concise yet in-depth description in a given topic. Primarily aimed at graduate students of physics, electrical engineering and information technology as well as material science, this book is equally of interest to professionals looking for a broader overview. Experts might appreciate the book for having quick access to principles as well as a source for getting insight into related fields.

Advanced Electronic Materials and Novel Devices

Nanoelectronics and Information Technology

Ulrich Böttger

Stephan Tiedke

Here, more than 20 experts from leading research institutes around the world present the entire scope of this rapidly developing field. In so doing, they cover a wide range of topics, including the characterization and investigation of structural, dielectric and piezoelectric properties of ceramic materials, a well as phase transitions, electrical and optical properties and microscopic investigations. Another feature is a complete profile of the properties of polar oxides -- from their proof to their latest applications. Throughout, the authors review, discuss and assess the material properties with regard to new and advanced characterization and imaging techniques. For physicists, physicochemists, semiconductor and solid state physicists, materials scientists, and students of chemistry and physics.

Properties, Characterization, and Imaging

Polar Oxides

David Payne

Theodor Schneller

Marija Kosec

This is the first text to cover all aspects of solution processed functional oxide thin-films. Chemical Solution Deposition (CSD) comprises all solution based thin- film deposition techniques, which involve chemical reactions of precursors during the formation of the oxide films, i. e. sol-gel type routes, metallo-organic decomposition routes, hybrid routes, etc. While the development of sol-gel type processes for optical coatings on glass by silicon dioxide and titanium dioxide dates from the mid-20th century, the first CSD derived electronic oxide thin films, such as lead zirconate titanate, were prepared in the 1980’s. Since then CSD has emerged as a highly flexible and cost-effective technique for the fabrication of a very wide variety of functional oxide thin films. Application areas include, for example, integrated dielectric capacitors, ferroelectric random access memories, pyroelectric infrared detectors, piezoelectric micro-electromechanical systems, antireflective coatings, optical filters, conducting-, transparent conducting-, and superconducting layers, luminescent coatings, gas sensors, thin film solid-oxide fuel cells, and photoelectrocatalytic solar cells. In the appendix detailed “cooking recipes” for selected material systems are offered.

Chemical Solution Deposition of Functional Oxide Thin Films

Daniele Ielmini

With its comprehensive coverage, this reference introduces readers to the wide topic of resistance switching, providing the knowledge, tools, and methods needed to understand, characterize and apply resistive switching memories. Starting with those materials that display resistive switching behavior, the book explains the basics of resistive switching as well as switching mechanisms and models. An in-depth discussion of memory reliability is followed by chapters on memory cell structures and architectures, while a section on logic gates rounds off the text. An invaluable self-contained book for materials scientists, electrical engineers and physicists dealing with memory research and development.

From Fundamentals of Nanoionic Redox Processes to Memristive Device Applications

Resistive Switching

Yoshinori Tokura

Jörg Heber

Darrell Schlom

Matthias Wuttig

This collection of extended abstracts summarizes the latest research as presented at "Frontiers in Electronic Materials", a Nature conference on correlation effects and memristive phenomena, which took place in 2012. The contributions from leading authors from the US, Japan, Korea, and Europe discuss breakthroughs and challenges in fundamental research as well as the potential for future applications. Hot topics covered include: Electron correlation and unusual quantum effects Oxide heterostructures and interfaces Multiferrroics, spintronics, ferroelectrics and flexoelectrics Processing in nanotechnology Advanced characterization techniques Superionic conductors, thermoelectrics, photovoltaics Chip architectures and computational concepts An essential resource for the researchers of today and tomorrow.

Correlation Effects, Spintronics, and Memristive Phenomena - Fundamentals and Application

Frontiers in Electronic Materials

Rainer Waser

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